Silicon is a chemical element with the symbol Si and atomic number 14. It is a hard, brittle crystalline solid with a blue-grey metallic lustre, and is a tetravalent metalloid and semiconductor. It is a member of group 14 in the periodic table: carbon is above it; and germanium, tin, lead, and flerovium are below it. It is relatively unreactive. Because of its high chemical affinity for oxygen, it was not until 1823 that Jöns Jakob Berzelius was first able to prepare it and characterize it in pure form. Its oxides form a family of anions known as silicates. Its melting and boiling points of 1414 °C and 3265 °C, respectively, are the second highest among all the metalloids and nonmetals, being surpassed only by boron. Silicon is the eighth most common element in the universe by mass, but very rarely occurs as the pure element in the Earth's crust. It is most widely distributed in space in cosmic dusts, planetoids, and planets as various forms of silicon dioxide (silica) or silicates. More than 90% of the Earth's crust is composed of silicate minerals, making silicon the second most abundant element in the Earth's crust (about 28% by mass), after oxygen. Silicon is a natural element, and when not previously present has a residence time of about 400 years in the world's oceans.[1]
Most silicon is used commercially without being separated, and often with very little processing of the natural minerals. Such use includes industrial construction with clays, silica sand, and stone. Silicates are used in Portland cement for mortar and stucco, and mixed with silica sand and gravel to make concrete for walkways, foundations, and roads. They are also used in whiteware ceramics such as porcelain, and in traditional silicate-based soda-lime glass and many other specialty glasses. Silicon compounds such as silicon carbide are used as abrasives and components of high-strength ceramics. Silicon is the basis of the widely used synthetic polymers called silicones.
The late 20th century to early 21st century has been described as the Silicon Age (also known as the Digital Age or Information Age) due to elemental silicon having a large impact on the modern world economy. The relatively small portion of very highly purified elemental silicon used in semiconductor electronics (< 10%) is essential to the metal–oxide–semiconductor (MOS) transistors and integrated circuit chips used in most modern technology (such as computers and cell phones, for example). The most widely used silicon device is the MOSFET (metal–oxide–semiconductor field-effect transistor), which has been manufactured in larger numbers than any other device in history. Free silicon is also used in the steel refining, aluminium-casting, and fine chemical industries (often to make fumed silica).
Silicon is an essential element in biology, although only traces are required by animals. However, various sea sponges and microorganisms, such as diatoms and radiolaria, secrete skeletal structures made of silica. Silica is deposited in many plant tissues.[2]
History[]
Due to the abundance of silicon in the Earth's crust, natural silicon-based materials had been used for thousands of years. Silicon rock crystals were familiar to various ancient civilizations, such as the predynastic Egyptians who used it for beads and small vases, as well as the ancient Chinese. Glass containing silica was manufactured by the Egyptians since at least 1500 BC, as well as by the ancient Phoenicians. Natural silicate compounds were also used in various types of mortar for construction of early human dwellings.[3]
Silicon semiconductors[]

Mohamed M. Atalla's development of silicon surface passivation in 1957 and the metal–oxide–silicon (MOS) transistor in 1959 led to the silicon revolution.
The first semiconductor devices did not use silicon, but used galena, including German physicist Ferdinand Braun's crystal detector in 1874 and Bengali physicist Jagadish Chandra Bose's radio crystal detector in 1901.[4][5] The first silicon semiconductor device was a silicon radio crystal detector, developed by American engineer Greenleaf Whittier Pickard in 1906.[5]
In 1940, Russell Ohl discovered the p-n junction and photovoltaic effects in silicon. In 1941, techniques for producing high-purity germanium and silicon crystals were developed for radar microwave detector crystals during World War II.[4] In 1947, physicist William Shockley theorized a field-effect amplifier made from germanium and silicon, but he failed to build a working device, before eventually working with germanium instead. The first working transistor was a point-contact transistor built by John Bardeen and Walter Brattain later that year while working under Shockley.[6] In 1954, physical chemist Morris Tanenbaum fabricated the first silicon junction transistor at Bell Labs.[7] In 1955, Carl Frosch and Lincoln Derick at Bell Labs accidentally discovered that silicon dioxide (SiO2) could be grown on silicon,[8] and they later proposed this could mask silicon surfaces during diffusion processes in 1958.[9]
In the early years of the semiconductor industry, up until the late 1950s, germanium was the dominant semiconductor material for transistors and other semiconductor devices, rather than silicon. Germanium was initially considered the more effective semiconductor material, as it was able to demonstrate better performance due to higher carrier mobility.[10][11] The relative lack of performance in early silicon semiconductors was due to electrical conductivity being limited by unstable quantum surface states,[12] where electrons are trapped at the surface, due to dangling bonds that occur because unsaturated bonds are present at the surface.[13] This prevented electricity from reliably penetrating the surface to reach the semiconducting silicon layer.[14][15]
A breakthrough in silicon semiconductor technology came with the work of Egyptian engineer Mohamed M. Atalla, who developed the process of surface passivation by thermal oxidation at Bell Labs in the late 1950s.[13][16][11] He discovered that the formation of a thermally grown silicon dioxide layer greatly reduced the concentration of electronic states at the silicon surface,[16] and that silicon oxide layers could be used to electrically stabilize silicon surfaces.[17] Atalla first published his findings in Bell memos during 1957, and then demonstrated it in 1958.[18][19] This was the first demonstration to show that high-quality silicon dioxide insulator films could be grown thermally on the silicon surface to protect the underlying silicon p-n junction diodes and transistors.[9] Atalla's surface passivation process enabled silicon to surpass the conductivity and performance of germanium, and led to silicon replacing germanium as the dominant semiconductor material, paving the way for the silicon revolution.[11][12] Atalla's surface passivation process is considered the most important advance in silicon semiconductor technology, paving the way for the mass-production of silicon semiconductor devices.[20]
Atalla's pioneering work on surface passivation and thermal oxidation culminated in his invention of the MOSFET (metal–oxide–silicon field-effect transistor), along with his Korean colleague Dawon Kahng, in 1959. The MOSFET was the first mass-produced silicon transistor, and is credited with starting the silicon revolution.[12] In addition, Atalla's surface passivation process was the basis for two other important silicon semiconductor inventions at Fairchild Semiconductor, Swiss engineer Jean Hoerni's planar technology in 1958 and American physicist Robert Noyce's silicon integrated circuit chip in 1959.[19][21][20] This in turn led to Atalla in 1960 proposing the concept of the MOS integrated circuit, a silicon chip built from MOSFETs, which later became the standard semiconductor device fabrication process for integrated circuits.[22] By the mid-1960s, Atalla's process for oxidized silicon surfaces was used to fabricate virtually all integrated circuits and silicon devices.[23] Surface passivation by thermal oxidation remains a key feature of silicon semiconductor technology.[24]
Silicon Age[]

The MOSFET (metal–oxide–silicon field-effect transistor), also known as the MOS transistor, is the key component of the Silicon Age. It was invented by Mohamed M. Atalla and Dawon Kahng in 1959.
The Silicon Age refers to the late 20th century to early 21st century.[12][25][26] This is due to silicon being the dominant material of the Silicon Age (also known as the Digital Age or Information Age), similar to how the Stone Age, Bronze Age and Iron Age were defined by the dominant materials during their respective ages of civilization.[12]
The key component or "workhorse" of the silicon revolution (also known as the digital revolution or information revolution) is the silicon MOSFET (MOS transistor).[12][25] It was the first truly compact transistor that could be miniaturised and mass-produced for a wide range of uses,[22] The beginning of the silicon revolution has been dated to 1960, when Mohamed M. Atalla and Dawon Kahng first demonstrated their invention of the MOSFET.[12][27] Since then, the mass-production of silicon MOSFETs and MOS integrated circuit chips, along with continuous MOSFET scaling miniaturization at an exponential pace (as predicted by Moore's law), has led to revolutionary changes in technology, economy, culture and thinking.[12] The MOSFET has since become the most widely manufactured device in history, with an estimated total of 13 sextillion MOSFETs having been manufactured between 1960 and 2018.[28]
Because silicon is an important element in high-technology semiconductor devices, many places in the world bear its name. For example, Santa Clara Valley in California acquired the nickname Silicon Valley, as the element is the base material in the semiconductor industry there. Since then, many other places have been dubbed similarly, including Silicon Forest in Oregon, Silicon Hills in Austin, Texas, Silicon Slopes in Salt Lake City, Utah, Silicon Saxony in Germany, Silicon Valley in India, Silicon Border in Mexicali, Mexico, Silicon Fen in Cambridge, England, Silicon Roundabout in London, Silicon Glen in Scotland, Silicon Gorge in Bristol, England, Silicon Alley in New York, New York and Silicon Beach in Los Angeles, California.[29]
Occurrence[]
Silicon is the eighth most abundant element in the universe, coming after hydrogen, helium, carbon, nitrogen, oxygen, iron, and neon. These abundances are not replicated well on Earth due to substantial separation of the elements taking place during the formation of the Solar System. Silicon makes up 27.2% of the Earth's crust by weight, second only to oxygen at 45.5%, with which it always is associated in nature. Further fractionation took place in the formation of the Earth by planetary differentiation: Earth's core, which makes up 31.5% of the mass of the Earth, has approximate composition Fe25Ni2Co0.1S3; the mantle makes up 68.1% of the Earth's mass and is composed mostly of denser oxides and silicates, an example being olivine, (Mg,Fe)2SiO4; while the lighter siliceous minerals such as aluminosilicates rise to the surface and form the crust, making up 0.4% of the Earth's mass.[30][31]
The crystallisation of igneous rocks from magma depends on a number of factors; among them are the chemical composition of the magma, the cooling rate, and some properties of the individual minerals to be formed, such as lattice energy, melting point, and complexity of their crystal structure. As magma is cooled, olivine appears first, followed by pyroxene, amphibole, biotite mica, orthoclase feldspar, muscovite mica, quartz, zeolites, and finally, hydrothermal minerals. This sequence shows a trend toward increasingly complex silicate units with cooling, and the introduction of hydroxide and fluoride anions in addition to oxides. Many metals may substitute for silicon. After these igneous rocks undergo weathering, transport, and deposition, sedimentary rocks like clay, shale, and sandstone are formed. Metamorphism also may occur at high temperatures and pressures, creating an even vaster variety of minerals.[30]
There are four sources for silicon fluxes into the ocean include chemical weathering of continental rocks, river transport, dissolution of continental terrigenous silicates, and through the reaction between submarine basalts and hydrothermal fluid which release dissolved silicon. All four of these fluxes are interconnected in the ocean's biogeochemical cycle as they all were initially formed from the weathering of Earth's crust.[32]
Approximately 300-900 megatonnes of Aeolian dust is deposited into the world's oceans each year. Of that value, 80-240 megatonnes are in the form of particulate silicon. The total amount of particulate silicon deposition into the ocean is still less than the amount of silicon influx into the ocean via riverine transportation.[33] Aeolian inputs of particulate lithogenic silicon into the North Atlantic and Western North Pacific oceans are the result of dust settling on the oceans from the Sahara and Gobi Desert, respectively.[32] Riverine transports are the major source of silicon influx into the ocean in coastal regions, while silicon deposition in the open ocean is greatly influenced by the settling of Aeolian dust.[33]
Production[]
Silicon of 96–99% purity is made by reducing quartzite or sand with highly pure coke. The reduction is carried out in an electric arc furnace, with an excess of SiO2 used to stop silicon carbide (SiC) from accumulating:[34]
- SiO2 + 2 C → Si + 2 CO
- 2 SiC + SiO2 → 3 Si + 2 CO
This reaction, known as carbothermal reduction of silicon dioxide, usually is conducted in the presence of scrap iron with low amounts of phosphorus and sulfur, producing ferrosilicon.[34] Ferrosilicon, an iron-silicon alloy that contains varying ratios of elemental silicon and iron, accounts for about 80% of the world's production of elemental silicon, with China, the leading supplier of elemental silicon, providing 4.6 million tonnes (or 2/3 of world output) of silicon, most of it in the form of ferrosilicon. It is followed by Russia (610,000 t), Norway (330,000 t), Brazil (240,000 t), and the United States (170,000 t).[35] Ferrosilicon is primarily used by the iron and steel industry (see below) with primary use as alloying addition in iron or steel and for de-oxidation of steel in integrated steel plants.[34]
Another reaction, sometimes used, is aluminothermal reduction of silicon dioxide, as follows:[36]
- 3 SiO2 + 4 Al → 3 Si + 2 Al2O3
Leaching powdered 96–97% pure silicon with water results in ~98.5% pure silicon, which is used in the chemical industry. However, even greater purity is needed for semiconductor applications, and this is produced from the reduction of tetrachlorosilane (silicon tetrachloride) or trichlorosilane. The former is made by chlorinating scrap silicon and the latter is a byproduct of silicone production. These compounds are volatile and hence can be purified by repeated fractional distillation, followed by reduction to elemental silicon with very pure zinc metal as the reducing agent. The spongy pieces of silicon thus produced are melted and then grown to form cylindrical single crystals, before being purified by zone refining. Other routes use the thermal decomposition of silane or tetraiodosilane (SiI
4). Another process used is the reduction of sodium hexafluorosilicate, a common waste product of the phosphate fertilizer industry, by metallic sodium: this is highly exothermic and hence requires no outside fuel source.
Hyperfine silicon is made at a higher purity than almost any other material: transistor production requires impurity levels in silicon crystals less than 1 part per 1010, and in special cases impurity levels below 1 part per 1012 are needed and attained.[34]
Applications[]
Compounds[]
Most silicon is used industrially without being purified, and indeed, often with comparatively little processing from its natural form. More than 90% of the Earth's crust is composed of silicate minerals, which are compounds of silicon and oxygen, often with metallic ions when negatively charged silicate anions require cations to balance the charge. Many of these have direct commercial uses, such as clays, silica sand, and most kinds of building stone. Thus, the vast majority of uses for silicon are as structural compounds, either as the silicate minerals or silica (crude silicon dioxide). Silicates are used in making Portland cement (made mostly of calcium silicates) which is used in building mortar and modern stucco, but more importantly, combined with silica sand, and gravel (usually containing silicate minerals such as granite), to make the concrete that is the basis of most of the very largest industrial building projects of the modern world.[37]
Silica is used to make fire brick, a type of ceramic. Silicate minerals are also in whiteware ceramics, an important class of products usually containing various types of fired clay minerals (natural aluminium phyllosilicates). An example is porcelain, which is based on the silicate mineral kaolinite. Traditional glass (silica-based soda-lime glass) also functions in many of the same ways, and also is used for windows and containers. In addition, specialty silica based glass fibers are used for optical fiber, as well as to produce fiberglass for structural support and glass wool for thermal insulation.
Silicones often are used in waterproofing treatments, molding compounds, mold-release agents, mechanical seals, high temperature greases and waxes, and caulking compounds. Silicone is also sometimes used in breast implants, contact lenses, explosives and pyrotechnics.[38] Silly Putty was originally made by adding boric acid to silicone oil.[39] Other silicon compounds function as high-technology abrasives and new high-strength ceramics based upon silicon carbide. Silicon is a component of some superalloys.
Alloys[]
Elemental silicon is added to molten cast iron as ferrosilicon or silicocalcium alloys to improve performance in casting thin sections and to prevent the formation of cementite where exposed to outside air. The presence of elemental silicon in molten iron acts as a sink for oxygen, so that the steel carbon content, which must be kept within narrow limits for each type of steel, can be more closely controlled. Ferrosilicon production and use is a monitor of the steel industry, and although this form of elemental silicon is grossly impure, it accounts for 80% of the world's use of free silicon. Silicon is an important constituent of electrical steel, modifying its resistivity and ferromagnetic properties.
The properties of silicon may be used to modify alloys with metals other than iron. "Metallurgical grade" silicon is silicon of 95–99% purity. About 55% of the world consumption of metallurgical purity silicon goes for production of aluminium-silicon alloys (silumin alloys) for aluminium part casts, mainly for use in the automotive industry. Silicon's importance in aluminium casting is that a significantly high amount (12%) of silicon in aluminium forms a eutectic mixture which solidifies with very little thermal contraction. This greatly reduces tearing and cracks formed from stress as casting alloys cool to solidity. Silicon also significantly improves the hardness and thus wear-resistance of aluminium.[40][41]
Electronics[]
Most elemental silicon produced remains as a ferrosilicon alloy, and only approximately 20% is refined to metallurgical grade purity (a total of 1.3–1.5 million metric tons/year). An estimated 15% of the world production of metallurgical grade silicon is further refined to semiconductor purity.[41] This typically is the "nine-9" or 99.9999999% purity,[42] nearly defect-free single crystalline material.[43]
Monocrystalline silicon of such purity is usually produced by the Czochralski process, is used to produce silicon wafers used in the semiconductor industry, in electronics, and in some high-cost and high-efficiency photovoltaic applications.[44] Pure silicon is an intrinsic semiconductor, which means that unlike metals, it conducts electron holes and electrons released from atoms by heat; silicon's electrical conductivity increases with higher temperatures. Pure silicon has too low a conductivity (i.e., too high a resistivity) to be used as a circuit element in electronics. In practice, pure silicon is doped with small concentrations of certain other elements, which greatly increase its conductivity and adjust its electrical response by controlling the number and charge (positive or negative) of activated carriers. Such control is necessary for transistors, solar cells, semiconductor detectors, and other semiconductor devices used in the computer industry and other technical applications.[45] In silicon photonics, silicon may be used as a continuous wave Raman laser medium to produce coherent light.[46]
In common integrated circuits, a wafer of monocrystalline silicon serves as a mechanical support for the circuits, which are created by doping and insulated from each other by thin layers of silicon oxide, an insulator that is easily produced on Si surfaces by processes of thermal oxidation or local oxidation (LOCOS), which involve exposing the element to oxygen under the proper conditions that can be predicted by the Deal–Grove model. Silicon has become the most popular material for both high power semiconductors and integrated circuits because it can withstand the highest temperatures and greatest electrical activity without suffering avalanche breakdown (an electron avalanche is created when heat produces free electrons and holes, which in turn pass more current, which produces more heat). In addition, the insulating oxide of silicon is not soluble in water, which gives it an advantage over germanium (an element with similar properties which can also be used in semiconductor devices) in certain fabrication techniques.[47]
Monocrystalline silicon is expensive to produce, and is usually justified only in production of integrated circuits, where tiny crystal imperfections can interfere with tiny circuit paths. For other uses, other types of pure silicon may be employed. These include hydrogenated amorphous silicon and upgraded metallurgical-grade silicon (UMG-Si) used in the production of low-cost, large-area electronics in applications such as liquid crystal displays and of large-area, low-cost, thin-film solar cells. Such semiconductor grades of silicon are either slightly less pure or polycrystalline rather than monocrystalline, and are produced in comparable quantities as the monocrystalline silicon: 75,000 to 150,000 metric tons per year. The market for the lesser grade is growing more quickly than for monocrystalline silicon. By 2013, polycrystalline silicon production, used mostly in solar cells, was projected to reach 200,000 metric tons per year, while monocrystalline semiconductor grade silicon was expected to remain less than 50,000 tons per year.[41]
Quantum dots[]
Silicon quantum dots are created through the thermal processing of hydrogen silsesquioxane into nanocrystals ranging from a few nanometers to a few microns, displaying size dependent luminescent properties.[48][49] The nanocrystals display large Stokes shifts converting photons in the ultra-violet range to photons in the visible or infrared, depending on the particle size, allowing for applications in quantum dot displays and luminescent solar concentrators due to their limited self absorption. A benefit of using silicon based quantum dots over cadmium or indium is the non-toxic, metal-free nature of silicon.[50][51] Another application of silicon quantum dots is for sensing of hazardous materials. The sensors take advantage of the luminescent properties of the quantum dots through quenching of the photoluminescence in the presence of the hazardous substance.[52] There are many methods used for hazardous chemical sensing with a few being electron transfer, fluorescence resonance energy transfer, and photocurrent generation.[53] Electron transfer quenching occurs when the lowest unoccupied molecular orbital (LUMO) is slightly lower in energy than the conduction band of the quantum dot, allowing for the transfer electrons between the two, preventing recombination of the holes and electrons within the nanocrystals. The effect can also be achieved in reverse with a donor molecule having its highest occupied molecular orbital (HOMO) slightly higher than a valence band edge of the quantum dot, allowing electrons to transfer between them, filling the holes and preventing recombination. Fluorescence resonance energy transfer occurs when a complex forms between the quantum dot and a quencher molecule. The complex will continue to absorb light but when the energy is converted to the ground state it does not release a photon, quenching the material. The third method uses different approach by measuring the photocurrent emitted by the quantum dots instead of monitoring the photoluminescent display. If the concentration of the desired chemical increases then the photocurrent given off by the nanocrystals will change in response.[54]
Biological role[]
Although silicon is readily available in the form of silicates, very few organisms use it directly. Diatoms, radiolaria, and siliceous sponges use biogenic silica as a structural material for their skeletons. In more advanced plants, the silica phytoliths (opal phytoliths) are rigid microscopic bodies occurring in the cell; some plants, for example rice, need silicon for their growth.[55][56][57] Silicon has been shown to improve plant cell wall strength and structural integrity in some plants.[58][57]
Several horticultural crops are known to protect themselves against fungal plant pathogens with silicon, to such a degree that fungicide application may fail unless accompanied by sufficient silicon nutrition. Silicaceous plant defense molecules activate some phytoalexins, meaning some of them are signalling substances producing acquired immunity. When deprived, some plants will substitute with increased production of other defensive substances.[57]
Marine microbial influences[]
Diatoms uses silicon in the biogenic silica (BSIO2) form,[59] which is taken up by the silicon transport protein (SIT) to be predominantly used in the cell wall structure as frustules.[60] Silicon enters the ocean in a dissolved form such as silicic acid or silicate.[61] Since diatoms are one of the main users of these forms of silicon, they contribute greatly to the concentration of silicon throughout the ocean. Silicon forms a nutrient-like profile in the ocean due to the diatom productivity in shallow depths.[61] Therefore, less concentration of silicon in the upper ocean and more concentrations of silicon in the deep/lower ocean.
Diatom productivity in the upper ocean contribute to the amount of silicon exported to the lower ocean.[62] When diatom cells are lysed in the upper ocean, their nutrients like, iron, zinc, and silicon, are brought to the lower ocean through a process called marine snow. Marine snow involves the downward transfer of particulate organic matter by vertical mixing of dissolved organic matter.[63] It has been suggested that silicon is considered crucial to diatom productivity and as long as there is silicic acid available for diatoms to utilize, the diatoms can contribute to other important nutrient concentrations in the deep ocean as well.[64]
In coastal zones, diatoms serve as the major phytoplanktonic organisms and greatly contribute to biogenic silica production. In the open ocean, however, diatoms have a reduced role in global annual silica production. Diatoms in North Atlantic and North Pacific subtropical gyres only contribute about 5-7% of global annual marine silica production. The Southern Ocean produces about one-third of global marine biogenic silica.[32] The Southern Ocean is referred to as having a "biogeochemical divide"[65] since only minuscule amounts of silicon are transported out of this region.
Human nutrition[]
There is some evidence that silicon is important to human health for their nail, hair, bone, and skin tissues,[66] for example, in studies that demonstrate that premenopausal women with higher dietary silicon intake have higher bone density, and that silicon supplementation can increase bone volume and density in patients with osteoporosis.[67] Silicon is needed for synthesis of elastin and collagen, of which the aorta contains the greatest quantity in the human body,[68] and has been considered an essential element;[69] nevertheless, it is difficult to prove its essentiality, because silicon is very common, and hence, deficiency symptoms are difficult to reproduce.[70]
Silicon is currently under consideration for elevation to the status of a "plant beneficial substance by the Association of American Plant Food Control Officials (AAPFCO)."[71][72]
Safety[]
People may be exposed to elemental silicon in the workplace by breathing it in, swallowing it, or having contact with the skin or eye. In the latter two cases, silicon poses a slight hazard as an irritant. It is hazardous if inhaled.[73] The Occupational Safety and Health Administration (OSHA) has set the legal limit for silicon exposure in the workplace as 15 mg/m3 total exposure and 5 mg/m3 respiratory exposure over an eight-hour workday. The National Institute for Occupational Safety and Health (NIOSH) has set a recommended exposure limit (REL) of 10 mg/m3 total exposure and 5 mg/m3 respiratory exposure over an eight-hour workday.[74] Inhalation of crystalline silica dust may lead to silicosis, an occupational lung disease marked by inflammation and scarring in the form of nodular lesions in the upper lobes of the lungs.[75]
See also[]
- Amorphous silicon
- Black silicon
- Covalent superconductors
- List of countries by silicon production
- List of silicon producers
- Monocrystalline silicon
- Silicon Nanowires (SiNWs)
- Polycrystalline silicon
- Printed silicon electronics
- Silicon tombac
- Silicon Valley
- silicene
- Transistor
References[]
- ↑ Treguer, P.; Nelson, D. M.; Van Bennekom, A. J.; DeMaster, D. J.; Leynaert, A.; Queguiner, B. (21 April 1995). "The Silica Balance in the World Ocean: A Reestimate". Science. 268 (5209): 375–379. Bibcode:1995Sci...268..375T. doi:10.1126/science.268.5209.375. PMID 17746543. S2CID 5672525.
- ↑ Cutter, Elizabeth G. (1978). Plant Anatomy. Part 1 Cells and Tissues (2nd ed.). London: Edward Arnold. ISBN 978-0-7131-2639-6.
- ↑ "Silicon". Encyclopedia Britannica. Retrieved 22 August 2019.
- ↑ 4.0 4.1 "Timeline". The Silicon Engine. Computer History Museum. Retrieved 22 August 2019.
- ↑ 5.0 5.1 "1901: Semiconductor Rectifiers Patented as "Cat's Whisker" Detectors". The Silicon Engine. Computer History Museum. Retrieved 23 August 2019.
- ↑ "1947: Invention of the Point-Contact Transistor". The Silicon Engine. Computer History Museum. Retrieved 23 August 2019.
- ↑ "1954: Morris Tanenbaum fabricates the first silicon transistor at Bell Labs". The Silicon Engine. Computer History Museum. Retrieved 23 August 2019.
- ↑ Bassett, Ross Knox (2007). To the Digital Age: Research Labs, Start-up Companies, and the Rise of MOS Technology. Johns Hopkins University Press. pp. 22–23. ISBN 978-0-8018-8639-3.
- ↑ 9.0 9.1 Saxena, A. (2009). Invention of integrated circuits: untold important facts. International series on advances in solid state electronics and technology. World Scientific. pp. 96–97. ISBN 978-981-281-445-6.
- ↑ Dabrowski, Jarek; Müssig, Hans-Joachim (2000). "6.1. Introduction". Silicon Surfaces and Formation of Interfaces: Basic Science in the Industrial World. World Scientific. pp. 344–346. ISBN 978-981-02-3286-3.
- ↑ 11.0 11.1 11.2 Heywang, W.; Zaininger, K.H. (2013). "2.2. Early history". Silicon: Evolution and Future of a Technology. Springer Science & Business Media. pp. 26–28. ISBN 978-3-662-09897-4.
- ↑ 12.0 12.1 12.2 12.3 12.4 12.5 12.6 12.7 Feldman, Leonard C. (2001). "Introduction". Fundamental Aspects of Silicon Oxidation. Springer Science & Business Media. pp. 1–11. ISBN 978-3-540-41682-1.
- ↑ 13.0 13.1 Kooi, E.; Schmitz, A. (2005). "Brief Notes on the History of Gate Dielectrics in MOS Devices". High Dielectric Constant Materials: VLSI MOSFET Applications. Springer Science & Business Media. pp. 33–44. ISBN 978-3-540-21081-8.
- ↑ "Martin (John) M. Atalla". National Inventors Hall of Fame. 2009. Retrieved 21 June 2013.
- ↑ "Dawon Kahng". National Inventors Hall of Fame. Retrieved 27 June 2019.
- ↑ 16.0 16.1 Black, Lachlan E. (2016). New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface. Springer. p. 17. ISBN 978-3-319-32521-7.
- ↑ Lécuyer, Christophe; Brock, David C. (2010). Makers of the Microchip: A Documentary History of Fairchild Semiconductor. MIT Press. p. 111. ISBN 978-0-262-29432-4.
- ↑ Lojek, Bo (2007). History of Semiconductor Engineering. Springer Science & Business Media. pp. 120 & 321–323. ISBN 978-3-540-34258-8.
- ↑ 19.0 19.1 Bassett, Ross Knox (2007). To the Digital Age: Research Labs, Start-up Companies, and the Rise of MOS Technology. Johns Hopkins University Press. p. 46. ISBN 978-0-8018-8639-3.
- ↑ 20.0 20.1 Sah, Chih-Tang (October 1988). "Evolution of the MOS transistor-from conception to VLSI" (PDF). Proceedings of the IEEE. 76 (10): 1280–1326 (1290). Bibcode:1988IEEEP..76.1280S. doi:10.1109/5.16328. ISSN 0018-9219.
Those of us active in silicon material and device research during 1956–1960 considered this successful effort by the Bell Labs group led by Atalla to stabilize the silicon surface the most important and significant technology advance, which blazed the trail that led to silicon integrated circuit technology developments in the second phase and volume production in the third phase.
- ↑ Wolf, Stanley (March 1992). "A review of IC isolation technologies". Solid State Technology: 63.
- ↑ 22.0 22.1 Moskowitz, Sanford L. (2016). Advanced Materials Innovation: Managing Global Technology in the 21st century. John Wiley & Sons. pp. 165–167. ISBN 978-0-470-50892-3.
- ↑ Donovan, R. P. (November 1966). "The Oxide-Silicon Interface". Fifth Annual Symposium on the Physics of Failure in Electronics: 199–231. doi:10.1109/IRPS.1966.362364.
- ↑ "Surface Passivation – an overview". ScienceDirect. Retrieved 19 August 2019.
- ↑ 25.0 25.1 Dabrowski, Jarek; Müssig, Hans-Joachim (2000). "1.2. The Silicon Age". Silicon Surfaces and Formation of Interfaces: Basic Science in the Industrial World. World Scientific. pp. 3–13. ISBN 978-981-02-3286-3.
- ↑ Siffert, Paul; Krimmel, Eberhard (2013). "Preface". Silicon: Evolution and Future of a Technology. Springer Science & Business Media. ISBN 978-3-662-09897-4.
- ↑ "100 incredible years of physics – materials science". Institute of Physics. December 2019. Retrieved 10 December 2019.
- ↑ "13 Sextillion & Counting: The Long & Winding Road to the Most Frequently Manufactured Human Artifact in History". Computer History Museum. April 2, 2018. Retrieved 28 July 2019.
- ↑ Uskali, T., and Nordfors, D. (2007, 23 May). The role of journalism in creating the metaphor of Silicon Valley. Paper presented at Innovation Journalism 4 Conference, Stanford University, Palo Alto, Calif."Archived copy" (PDF). Archived from the original (PDF) on 2012-09-07. Retrieved 2016-08-08.
{{cite web}}
: CS1 maint: archived copy as title (link), retrieved 8 August 2016 - ↑ 30.0 30.1 Greenwood & Earnshaw 1997, p. 329.
- ↑ Greenwood and Earnshaw, pp. 329–330
- ↑ 32.0 32.1 32.2 Tréguer, Paul J.; De La Rocha, Christina L. (3 January 2013). "The World Ocean Silica Cycle". Annual Review of Marine Science. 5 (1): 477–501. doi:10.1146/annurev-marine-121211-172346. PMID 22809182.
- ↑ 33.0 33.1 Tegen, Ina; Kohfeld, Karen (2006). Atmospheric transport of silicon. Island Press. pp. 81–91. ISBN 1-59726-115-7.
- ↑ 34.0 34.1 34.2 34.3 Greenwood & Earnshaw 1997, p. 330.
- ↑ "Silicon Commodities Report 2011" (PDF). USGS. Retrieved 2011-10-20.
- ↑ Zulehner et al., p. 574
- ↑ Greenwood & Earnshaw 1997, p. 356.
- ↑ Koch, E.C.; Clement, D. (2007). "Special Materials in Pyrotechnics: VI. Silicon – An Old Fuel with New Perspectives". Propellants, Explosives, Pyrotechnics. 32 (3): 205. doi:10.1002/prep.200700021.
- ↑ Walsh, Tim (2005). "Silly Putty". Timeless toys: classic toys and the playmakers who created them. Andrews McMeel Publishing. ISBN 978-0-7407-5571-2.
- ↑ Apelian, D. (2009). "Aluminum Cast Alloys: Enabling Tools for Improved Performance" (PDF). Wheeling, Illinois: North American Die Casting Association. Archived from the original (PDF) on 2012-01-06.
- ↑ 41.0 41.1 41.2 Corathers, Lisa A. 2009 Minerals Yearbook. USGS
- ↑ "Semi" SemiSource 2006: A supplement to Semiconductor International. December 2005. Reference Section: How to Make a Chip. Adapted from Design News. Reed Electronics Group.
- ↑ SemiSource 2006: A supplement to Semiconductor International. December 2005. Reference Section: How to Make a Chip. Adapted from Design News. Reed Electronics Group.
- ↑ Zulehner et al., p. 590
- ↑ Zulehner et al., p. 573
- ↑ Dekker, R; Usechak, N; Först, M; Driessen, A (2008). "Ultrafast nonlinear all-optical processes in silicon-on-insulator waveguides". Journal of Physics D. 40 (14): R249–R271. Bibcode:2007JPhD...40..249D. doi:10.1088/0022-3727/40/14/r01.
- ↑ Semiconductors Without the Quantum Physics. Electropaedia
- ↑ Clark, Rhett J.; Aghajamali, Maryam; Gonzalez, Christina M.; Hadidi, Lida; Islam, Muhammad Amirul; Javadi, Morteza; Mobarok, Md Hosnay; Purkait, Tapas K.; Robidillo, Christopher Jay T.; Sinelnikov, Regina; Thiessen, Alyxandra N. (2017-01-10). "From Hydrogen Silsesquioxane to Functionalized Silicon Nanocrystals". Chemistry of Materials. 29 (1): 80–89. doi:10.1021/acs.chemmater.6b02667. ISSN 0897-4756.
- ↑ Hessel, Colin M.; Henderson, Eric J.; Veinot, Jonathan G. C. (2007). "Hydrogen Silsesquioxane: A Molecular Precursor for Nanocrystalline Si—SiO2 Composites and Freestanding Hydride-Surface-Terminated Silicon Nanoparticles". ChemInform. 38 (10). doi:10.1002/chin.200710014. ISSN 1522-2667.
- ↑ Lim, Cheol Hong; Han, Jeong-Hee; Cho, Hae-Won; Kang, Mingu (2014). "Studies on the Toxicity and Distribution of Indium Compounds According to Particle Size in Sprague-Dawley Rats". Toxicological Research. 30 (1): 55–63. doi:10.5487/TR.2014.30.1.055. ISSN 1976-8257. PMC 4007045. PMID 24795801.
- ↑ Zou, Hui; Wang, Tao; Yuan, Junzhao; Sun, Jian; Yuan, Yan asdf; Gu, Jianhong; Liu, Xuezhong; Bian, Jianchun; Liu, Zongping (2020-03-15). "Cadmium-induced cytotoxicity in mouse liver cells is associated with the disruption of autophagic flux via inhibiting the fusion of autophagosomes and lysosomes". Toxicology Letters. 321: 32–43. doi:10.1016/j.toxlet.2019.12.019. ISSN 0378-4274. PMID 31862506. S2CID 209435190.
- ↑ Nguyen, An; Gonzalez, Christina M; Sinelnikov, Regina; Newman, W; Sun, Sarah; Lockwood, Ross; Veinot, Jonathan G C; Meldrum, Al (2016-02-10). "Detection of nitroaromatics in the solid, solution, and vapor phases using silicon quantum dot sensors". Nanotechnology. 27 (10): 105501. Bibcode:2016Nanot..27j5501N. doi:10.1088/0957-4484/27/10/105501. ISSN 0957-4484. PMID 26863492.
- ↑ Gonzalez, Christina M.; Veinot, Jonathan G. C. (2016-06-02). "Silicon nanocrystals for the development of sensing platforms". Journal of Materials Chemistry C. 4 (22): 4836–4846. doi:10.1039/C6TC01159D. ISSN 2050-7534.
- ↑ Yue, Zhao; Lisdat, Fred; Parak, Wolfgang J.; Hickey, Stephen G.; Tu, Liping; Sabir, Nadeem; Dorfs, Dirk; Bigall, Nadja C. (2013-04-24). "Quantum-Dot-Based Photoelectrochemical Sensors for Chemical and Biological Detection". ACS Applied Materials & Interfaces. 5 (8): 2800–2814. doi:10.1021/am3028662. ISSN 1944-8244. PMID 23547912.
- ↑ Rahman, Atta-ur- (2008). "Silicon". Studies in Natural Products Chemistry. Vol. 35. p. 856. ISBN 978-0-444-53181-0.
- ↑ Exley, C. (1998). "Silicon in life:A bioinorganic solution to bioorganic essentiality". Journal of Inorganic Biochemistry. 69 (3): 139–144. doi:10.1016/S0162-0134(97)10010-1.
- ↑ 57.0 57.1 57.2 Epstein, Emanuel (1999). "SILICON". Annual Review of Plant Physiology and Plant Molecular Biology. 50: 641–664. doi:10.1146/annurev.arplant.50.1.641. PMID 15012222.
- ↑ Kim, Sang Gyu; Kim, Ki Woo; Park, Eun Woo; Choi, Doil (2002). "Silicon-Induced Cell Wall Fortification of Rice Leaves: A Possible Cellular Mechanism of Enhanced Host Resistance to Blast". Phytopathology. 92 (10): 1095–103. doi:10.1094/PHYTO.2002.92.10.1095. PMID 18944220.
- ↑ Bidle, Kay D.; Manganelli, Maura; Azam, Farooq (2002-12-06). "Regulation of Oceanic Silicon and Carbon Preservation by Temperature Control on Bacteria". Science. 298 (5600): 1980–1984. Bibcode:2002Sci...298.1980B. doi:10.1126/science.1076076. ISSN 0036-8075. PMID 12471255. S2CID 216994.
- ↑ Durkin, Colleen A.; Koester, Julie A.; Bender, Sara J.; Armbrust, E. Virginia (2016). "The evolution of silicon transporters in diatoms". Journal of Phycology. 52 (5): 716–731. doi:10.1111/jpy.12441. ISSN 1529-8817. PMC 5129515. PMID 27335204.
- ↑ 61.0 61.1 Dugdale, R. C.; Wilkerson, F. P. (2001-12-30). "Sources and fates of silicon in the ocean: the role of diatoms in the climate and glacial cycles". Scientia Marina. 65 (S2): 141–152. doi:10.3989/scimar.2001.65s2141. ISSN 1886-8134.
- ↑ Baines, Stephen B.; Twining, Benjamin S.; Brzezinski, Mark A.; Krause, Jeffrey W.; Vogt, Stefan; Assael, Dylan; McDaniel, Hannah (December 2012). "Significant silicon accumulation by marine picocyanobacteria". Nature Geoscience. 5 (12): 886–891. Bibcode:2012NatGe...5..886B. doi:10.1038/ngeo1641. ISSN 1752-0908.
- ↑ Turner, Jefferson T. (January 2015). "Zooplankton fecal pellets, marine snow, phytodetritus and the ocean's biological pump". Progress in Oceanography. 130: 205–248. Bibcode:2015PrOce.130..205T. doi:10.1016/j.pocean.2014.08.005. ISSN 0079-6611.
- ↑ Yool, Andrew; Tyrrell, Toby (2003). "Role of diatoms in regulating the ocean's silicon cycle". Global Biogeochemical Cycles. 17 (4): n/a. Bibcode:2003GBioC..17.1103Y. doi:10.1029/2002GB002018. ISSN 1944-9224.
- ↑ Marinov, I.; Gnanadesikan, A.; Toggweiler, J. R.; Sarmiento, J. L. (June 2006). "The Southern Ocean biogeochemical divide". Nature. 441 (7096): 964–967. Bibcode:2006Natur.441..964M. doi:10.1038/nature04883. PMID 16791191. S2CID 4428683.
- ↑ Martin, Keith R. (2013). "Chapter 14. Silicon: The Health Benefits of a Metalloid". In Astrid Sigel; Helmut Sigel; Roland K.O. Sigel (eds.). Interrelations between Essential Metal Ions and Human Diseases. Metal Ions in Life Sciences. Vol. 13. Springer. pp. 451–473. doi:10.1007/978-94-007-7500-8_14. ISBN 978-94-007-7499-5. PMID 24470100.
- ↑ Jugdaohsingh, R. (Mar–Apr 2007). "Silicon and bone health". The Journal of Nutrition, Health and Aging. 11 (2): 99–110. PMC 2658806. PMID 17435952.
- ↑ Loeper, J.; Fragny, M. (1978). The Physiological Role of the Silicon and its AntiAtheromatous Action. pp. 281–296. doi:10.1007/978-1-4613-4018-8_13. ISBN 978-1-4613-4020-1.
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ignored (help) - ↑ Nielsen, Forrest H. (1984). "Ultratrace Elements in Nutrition". Annual Review of Nutrition. 4: 21–41. doi:10.1146/annurev.nu.04.070184.000321. PMID 6087860.
- ↑ Lippard, Stephen J.; Jeremy M. Berg (1994). Principles of Bioinorganic Chemistry. Mill Valley, CA: University Science Books. p. 411. ISBN 978-0-935702-72-9.
- ↑ "AAPFCO Board of Directors 2006 Mid-Year Meeting" (PDF). Association of American Plant Food Control Officials. Archived from the original (PDF) on 6 January 2012. Retrieved 2011-07-18.
A presentation was made for Excell Minerals to recognize Silicon as a recognized plant nutrient
- ↑ Miranda, Stephen R.; Barker, Bruce (August 4, 2009). "Silicon: Summary of Extraction Methods". Harsco Minerals. Archived from the original on November 12, 2012. Retrieved 2011-07-18.
- ↑ Science Lab.com. "Material Safety Data Sheet: Silicon MSDS". sciencelab.com. Archived from the original on 23 March 2018. Retrieved 11 March 2018.
- ↑ "CDC – NIOSH Pocket Guide to Chemical Hazards – Silicon". www.cdc.gov. Retrieved 2015-11-21.
- ↑ Jane A. Plant; Nick Voulvoulis; K. Vala Ragnarsdottir (2012). Pollutants, Human Health and the Environment: A Risk Based Approach. Vol. 26. John Wiley & Sons. p. 273. Bibcode:2011ApGC...26S.238P. doi:10.1016/j.apgeochem.2011.03.113. ISBN 978-0-470-74261-7. Retrieved 24 August 2012.
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Bibliography[]
- Clayden, Jonathan; Greeves, Nick; Warren, Stuart (2012). Organic Chemistry (2nd ed.). Oxford University Press. ISBN 978-0-19-927029-3.
- King, R. Bruce (1995). Inorganic Chemistry of Main Group Elements. Wiley-VCH. ISBN 978-0-471-18602-1.
External links[]
- "Silicon Video - The Periodic Table of Videos - University of Nottingham". www.periodicvideos.com. Retrieved 2021-06-08.
- "CDC - NIOSH Pocket Guide to Chemical Hazards - Silicon". www.cdc.gov. Retrieved 2021-06-08.
- "Physical properties of Silicon (Si)". www.ioffe.ru. Retrieved 2021-06-08.